Abstract:
The two semiconductor layers Cu2ZnSnS4 (CZTS) and CdS were successfully
fabricated using economical, solution-based fabrication techniques. CZTS thin
film fabrication was done by spin coating technique onto soda-lime glass
substrates at rotating speed of 2000 to 6000 rpm. It was found that the optimum
precursor solution temperature is 38
o
C-42
o
C. The films dried at 140
o
C-160
o
C
and annealed in air at 280
o
C have shown a band gap in the range of 1.45 to
1.55eV. Cadmium Sulfide (CdS), the n-type semiconductor heterojunction partner
for CZTS was also deposited with good thickness control and uniformity in the
range of 50-100nm range. Chemical bath deposition method was utilized for CdS
thin film fabrication and the CdS thin film with optimum properties was obtained
at the conditions of 40
o
C-45
o
C temperature range and thickness variations were
also apparent with the number of coatings applied and the fabrication time. The
annealing temperature was found to be critical within the range of 180
o
C-220
o
C
(30 mins) for the optimization of CdS bandgap. CdS thin film fabricated under
optimum conditions has shown a bandgap range of 2.30eV-2.50eV. Successful
deposition on Fluorine doped Tin Oxide (FTO) glass substrate, reveals a feasible
route to fabricate superstrate type photovoltaic cell.
Citation:
Dilshan, H.A.D.I., Weerasinghe, W.D.D., & Attygalle, D. (2017). development of CZTS based solar cell
[Abstract]. In V. Sivahar (Ed.), Leveraging materials for a smart future (p. 4). Society of Mechanical Engineering Students, Department of Materials Science and Engineering, University of Moratuwa.
