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dc.contributor.author Munindradasa, DAI
dc.contributor.author Amaratunga, GAJ
dc.date.accessioned 2013-11-26T15:56:05Z
dc.date.available 2013-11-26T15:56:05Z
dc.date.issued 2000
dc.identifier.uri http://dl.lib.mrt.ac.lk/handle/123/9411
dc.description.abstract The photoluminescence (PL) in a-C:H:N was measured using a 2.4leV Ar ion laser line for varying N content. The PL results show a lowering of the PL peak energy and a spectral line width broadening as the N content in the film increases. Decomposition of the PL spectra into a series of Gaussian sub-peak levels shows two distinct peaks at 2.2 and 2.1eV and a broad peak at 1.7eV. It is found that the apparent lowering in the PL peak energy and the spectral line width broadening with increasing N content can be understood in terms of an increase in intensity of the sub-peak at 2.1eV with respect to that at the higher energy (2.2eV). The 1.7eV, 2.1eV and 2.2eV sub-peaks are also found in a-C:H without N. en_US
dc.language.iso en en_US
dc.title Optical characterstics of carbon based semiconductors en_US
dc.type Conference-Full-text en_US
dc.identifier.year 2000 en_US
dc.identifier.pgnos 198-207 en_US


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