dc.contributor.author | Munindradasa, DAI | |
dc.contributor.author | Amaratunga, GAJ | |
dc.date.accessioned | 2013-11-26T15:56:05Z | |
dc.date.available | 2013-11-26T15:56:05Z | |
dc.date.issued | 2000 | |
dc.identifier.uri | http://dl.lib.mrt.ac.lk/handle/123/9411 | |
dc.description.abstract | The photoluminescence (PL) in a-C:H:N was measured using a 2.4leV Ar ion laser line for varying N content. The PL results show a lowering of the PL peak energy and a spectral line width broadening as the N content in the film increases. Decomposition of the PL spectra into a series of Gaussian sub-peak levels shows two distinct peaks at 2.2 and 2.1eV and a broad peak at 1.7eV. It is found that the apparent lowering in the PL peak energy and the spectral line width broadening with increasing N content can be understood in terms of an increase in intensity of the sub-peak at 2.1eV with respect to that at the higher energy (2.2eV). The 1.7eV, 2.1eV and 2.2eV sub-peaks are also found in a-C:H without N. | en_US |
dc.language.iso | en | en_US |
dc.title | Optical characterstics of carbon based semiconductors | en_US |
dc.type | Conference-Full-text | en_US |
dc.identifier.year | 2000 | en_US |
dc.identifier.pgnos | 198-207 | en_US |